Investigations into the Power MOSFET SEGR Phenomenon and Its Physical Mechanism
نویسنده
چکیده
INTRODUCTION The state of understanding of the destructive SEGR event in power MOSFETS is relatively mature with large published efRorts, both experimental [1-5] and theoretical [6-8]. However, gaps remain in the understanding of the phenomenon, including unexplained experimental anomalies, empirical-only dependencies on some important device and incident ion physical parameters, and limited insight into latent effects. This paper’s purpose is to shed light on some of these using a selected range of real-world devices. In subjecting these devices to the usual accelerator experiments, during-irradiation current signatures were anal yzcd for the first time. To augment the heavy ion experiments, doping profiles and gate oxide thicknesses were measured and PISCES-based analyses were performed, Finally, post-SEGR failure investigations were conducted. These results yield new parametric correlations and physical insights into the SEGR failure mechanism.
منابع مشابه
A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors
Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space radiation threats to UMOS power devices include vulnerabilities to SEB, SEGR, and microdose. There ha...
متن کاملSingle-event Gate Rupture in Power Mosfets: a New Radiation Hardness Assurance Approach
Title of Document: SINGLE-EVENT GATE RUPTURE IN POWER MOSFETS: A NEW RADIATION HARDNESS ASSURANCE APPROACH Jean-Marie Lauenstein, Ph.D. Candidate, 2011 Directed By: Professor Neil Goldsman, Department of Electrical and Computer Engineering Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can ...
متن کاملDetermination of a new model to study ultra-saturation phenomenon during the loaded power transformer energization and its effect on differential protection
One of transient phenomenon that causes the mal-operation of the power transformer differential protection during the energization of a loaded power transformer is the ultra-saturation phenomenon. In this paper, a new model for investigating the ultra-saturation phenomenon during the energization of a loaded power transformer is presented and its effect on the differential protection of the pow...
متن کاملCharge Generation Mechanisms in Low-Voltage Power MOSFETs during Radiation Exposure
The decision to use a commercial power MOSFET in a harsh radioactive environment[1], such as outer space, is subordinated to the capacity of the device to tolerate single event effects (SEE)[2] caused by single ionising particles. An incident ion may trigger charge generating mechanisms in the active volumes of the device that may give rise to a simple momentary malfunction or to a destructive ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1999